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600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a TO-220 package
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Automotive-grade, very high accuracy (70 uV), high bandwidth (3 MHz), high temperature (175 °C)
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 1 MByte Flash, 564 Kbytes RAM, 550 MHz
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Wide bandwidth (20MHz) rail to rail input/output 5V CMOS Op-Amp, small offset, single
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Rail to rail input/output 5V CMOS Op-Amp, micro-power (10uA), GBP = 120kHz, single