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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an HU3PAK package
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Automotive-grade trench gate field-stop IGBT M series, 650 V, 30 A low-loss M series IGBT in an HU3P
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N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in DPAK package
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N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
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P-channel 40 V, 0.0155 Ohm typ., 42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package
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Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MO
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N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package