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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode
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N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package
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N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package