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N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package
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Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
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Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
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Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 package
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N-channel 75 V, 0.0095 Ohm typ., 80 A STripFET(TM) II Power MOSFET in D2PAK package
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N-channel 620 V, 3 Ohm typ., 2.2 A SuperMESH3(TM) Power MOSFET in DPAK package