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High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
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Ultra-low-power with FPU Arm Cortex-M33 MCU with TrustZone, 160 MHz with 2 Mbytes of Flash memory
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N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package
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Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long leads package
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Wide-bandwidth (8 MHz) rail to rail input/output 5 V CMOS small offset, single operational amplifier