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Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package
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Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package
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N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in DPAK package
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N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 HV package
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 1MByte of Flash memory, 1MB RAM, 480 MH