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Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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100 V, 40 A Field-Effect Rectifier Diode (FERD)
1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220 package