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SCTW90N65G2V

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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247

Out of stock

Quantity	$ per Unit	Savings
1 - 9	$29.67	0%
10 - 24	$27.37	8%
25 - 99	$26.14	12%
100 - 500	$23.37	21%
500 +	Contact Sales

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SCTW90N65G2V

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SCTW90N65G2V

SCTW90N65G2V

Active

Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package Learn More

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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Learn More