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High power density 600V Half bridge driver with two enhancement mode GaN HEMTs
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $13.08 | 54% |
10-24 | $10.53 | 24% |
25-99 | $9.84 | 16% |
100-249 | $9.16 | 8% |
250-499 | $5.17 | 39% |
500 | $4.97 | 41% |
500 + |
Contact sales |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and...
Read More
|