📢 $9.99 flat rate shipping in EMEA countries! Ends April 30th - Don't Miss Out!. 🛒 Shop now

MASTERGAN2TR

MASTERGAN2TR

Active

MASTERGAN2

High power density 600V Half bridge driver with two enhancement mode GaN HEMTs

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM

The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and...
Read More

Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS)
    • IDS(MAX) = 10 A (LS) + 6.5 A (HS)
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.
In stock
Quantity $ per unit Savings
1-5$13.130%
Contact sales
$13.13
$13.13
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM

The MASTERGAN2 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 150 mΩ and 225 mΩ for Low side and...
Read More

Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS)
    • IDS(MAX) = 10 A (LS) + 6.5 A (HS)
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shutdown functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Overtemperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.