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    MASTERGAN4

    MASTERGAN4

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    MASTERGAN4TR

    High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
    Description

    The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate...
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    Key features
    Key features
    • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
      • QFN 9 x 9 x 1 mm package
      • RDS(ON) = 225 mΩ
      • IDS(MAX) = 6.5 A
    • Reverse current capability
    • Zero reverse recovery loss
    • UVLO protection on low-side and high-side
    • Internal bootstrap diode
    • Interlocking function
    • Dedicated pin for shut down functionality
    • Accurate internal timing match
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Over temperature protection
    • Bill of material reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design.
    Out of Stock
    Quantity $ per unit Savings
    1-9$6.6424%
    10-24$6.0031%
    25-99$5.7134%
    100-249$4.9643%
    250-499$4.7446%
    500$4.3250%
    500 + Contact sales
    Special Price $6.64 Regular Price $8.71
    Parameters
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius125.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
    Description

    The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate...
    Read More

    Key features
    Key features
    • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
      • QFN 9 x 9 x 1 mm package
      • RDS(ON) = 225 mΩ
      • IDS(MAX) = 6.5 A
    • Reverse current capability
    • Zero reverse recovery loss
    • UVLO protection on low-side and high-side
    • Internal bootstrap diode
    • Interlocking function
    • Dedicated pin for shut down functionality
    • Accurate internal timing match
    • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
    • Over temperature protection
    • Bill of material reduction
    • Very compact and simplified layout
    • Flexible, easy and fast design.
    Associated products