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High power density 600V half-bridge driver with two enhancement mode GaN HEMTs
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $10.71 | 0% |
10-24 | $8.20 | 23% |
25-99 | $7.56 | 29% |
100-249 | $6.98 | 35% |
250-499 | $6.64 | 38% |
500 | $6.29 | 41% |
500 + |
Contact sales |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 125.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tray |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | VFQFPN 9X9X1.0 31L PITCH 0.6MM |
The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate...
Read More
|