MASTERGAN4TR

MASTERGAN4TR

MASTERGAN4

Active
High power density 600V half-bridge driver with two enhancement mode GaN HEMT
Quantity $ per Unit Savings
1 - 9$11.660%
10 - 24$10.738%
25 - 99$10.2812%
100 - 249$9.0722%
250 - 499$8.6126%
500$8.0731%
Contact Sales
In stock:
$11.66
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius125.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTray
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameVFQFPN 9X9X1.0 31L PITCH 0.6MM
Key features
  • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
    • QFN 9 x 9 x 1 mm package
    • RDS(ON) = 225 mΩ
    • IDS(MAX) = 6.5 A
  • Reverse current capability
  • Zero reverse recovery loss
  • UVLO protection on low-side and high-side
  • Internal bootstrap diode
  • Interlocking function
  • Dedicated pin for shut down functionality
  • Accurate internal timing match
  • 3.3 V to 15 V compatible inputs with hysteresis and pull-down
  • Over temperature protection
  • Bill of material reduction
  • Very compact and simplified layout
  • Flexible, easy and fast design.