Flat-rate $5.99 shipping worldwide throughout July - no code needed. Start your design today!Flat-rate $5.99 shipping worldwide throughout July - no code needed. Start your design today!Flat-rate $5.99 shipping worldwide throughout July - no code needed. Start your design today!Flat-rate $5.99 shipping worldwide throughout July - no code needed. Start your design today!

PD57018TR-E

PD57018TR-E

PD57018S-E

PD57018S-E

PD57018STR-E

Active

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Quantity $ per Unit Savings
1 - 500$31.540%
Contact Sales
Out of stock
$31.54
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NamePowerSO-10RF (straight lead)

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

Key features
  • Excellent thermal stability
  • Common source configuration
  • POUT = 18 W with 16.5dB gain@945 MHz/28 V
  • New RF plastic package