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N-channel 800 V, 3.8 Ohm typ., 2.5 A SuperMESH Power MOSFET in IPAK package
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Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MO
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Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 package
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Automotive-grade N-channel logic level 40 V, 2.2 mOhm max., 167 A STripFET F8 Power MOSFET in a Powe
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High voltage NPN power transistor for high definition and new super-slim CRT displays
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Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
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Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package