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NRND
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Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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High-performance and DSP with DP-FPU, Arm Cortex-M7 + Cortex-M4 MCU with 2MBytes of Flash memory, 1M
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Ultra-low-power with FPU Arm Cortex-M33 with Trust Zone, MCU 110 MHz with 512 kbytes of Flash memory
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Dual synchronous step down controller with adjustable output voltages plus LDO