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N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP package
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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode
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N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in TO-220 package
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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in D7 packing
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Automotive-grade N-channel 40 V, 2.2 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package
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N-channel 400 V, 1.45 Ohm typ., 3 A SuperMESH Power MOSFET in DPAK package