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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode
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Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
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N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 pa
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N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package
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Automotive-grade trench gate field-stop IGBT 650 V, 200 A in a STPAK package
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N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO-247 package