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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
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Trench gate field-stop 650 V, 10 A low-loss M series IGBT in a D2PAK package
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N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 package
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N-channel 600 V, 168 mOhm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package
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N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package
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N-channel 800 V, 0.35 Ohm typ., 11 A MDmesh Power MOSFET in a TO-220FP package
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Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 packag
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N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package