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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode
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N-channel 100 V, 14.5 Ohm typ., 45 A, STripFET F7 Power MOSFETs in TO-220 package
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N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
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N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP package
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N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package
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Trench gate field-stop 650 V, 15 A low-loss M series IGBT die in D7 packing