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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 pa
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Sub-GHz Wireless Microcontrollers. Single-core Arm Cortex-M0+ @64 MHz with 64 Kbytes of Flash memory
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N-channel 40 V, 1.3 m? typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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High-performance advanced line, Arm Cortex-M4 core with DSP and FPU, 1 Mbyte of Flash memory, 180 MH
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N-channel 600 V, 22 mOhm typ., 84 A STMESH trench T Power MOSFET in a TO-247 long leads package
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20 W + 20 W dual BTL class-D audio amplifier demonstration board based on the TDA7491HV