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Low clamping, low capacitance bidirectional single line ESD protection
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600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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Very high accuracy (0.5%) high bandwidth (2.1MHz) bidirectional low-side current sense amplifier
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N-channel 1500 V, 1.6 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package
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Rail-to-rail input/output 5V CMOS Op-Amp, micro-power (60uA), GBP=880kHz, single