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Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
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200 mA output current with thermal shutdown and output current limiter, 3.1 MHz, 36 V, BiCMOS dual o
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Rail-to-rail input/output 5V CMOS Op-Amps, micro-power (60uA), GBP=880kHz, quad
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N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-220 package
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Automotive-grade, very high accuracy (70 uV), high bandwidth (3 MHz), high temperature (175 °C)
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High-performance, Arm Cortex-M33, MCU with 512-Kbyte Flash, 272-Kbyte RAM, 250 MHz CPU
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Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package
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Ultra-low-power with FPU Arm Cortex-M33 MCU with TrustZone, 160 MHz with 512 Kbytes of Flash memory