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Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an HiP247 long leads package
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Authentication, state-of-the-art security for peripherals and IoT devices
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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 pa
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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
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ESD Protection for USB 2.0 High Speed in SOT23 with 15kV contact ESD protection capability
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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package