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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
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Broadband powerline communication SoC optimized for audio/video streaming and consumer applications
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Broadband powerline communication SoC optimized for audio/video streaming and consumer applications
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Dynamic NFC/RFID tag IC with 4-Kbit EEPROM, and fast transfer mode capability
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Dynamic NFC/RFID tag IC with 4-Kbit EEPROM, and fast transfer mode capability
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Dynamic NFC/RFID tag IC with 4-Kbit EEPROM, and fast transfer mode capability