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Galvanically isolated gate driver for IGBTs with 6 A Source/Sink current, desaturation protection an
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Galvanically isolated gate driver for SiC MOSFETs with 6 A Source/Sink current, desaturation protect
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Galvanically isolated gate driver for IGBTs with 10 A Source/Sink current, desaturation protection a
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Galvanically isolated gate driver for SiC MOSFETs with 10 A Source/Sink current, desaturation protec
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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package
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Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET in an HU3PAK package
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N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV package