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Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
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Very high accuracy (25 µV) high bandwidth (3 MHz) zero drift 5 V operational amplifiers
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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package
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4 A Monolithic synchronous step-down converter with high efficiency at light load
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N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a TO-247 package