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Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
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Very high accuracy (25 µV) high bandwidth (3 MHz) zero drift 5 V operational amplifiers
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Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package