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Ultra low drop-low noise BiCMOS voltage regulators low ESR capacitors compatible
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
Time-of-Flight (ToF) ranging sensor with multi target detection
Trench gate field-stop IGBT M series, 650 V 15 A low loss
N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a DPAK package