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Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 package
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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 1 MByte Flash, 564 KBytes RAM, 550 MHz
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N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package