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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
600 V, 60 A very high speed trench gate field-stop IGBT
Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package
N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package
N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package