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N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 168 mOhm typ., 18 A MDmesh M2 Power MOSFET in a TO-220FP package
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N-channel 650 V, 150 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 78 mOhm typ., 34 A MDmesh M2 Power MOSFET in a TO-220FP package
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Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
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16 channels ±100 V, ±2/4 A, 5/3-level RTZ, high-speed ultrasound pulser with integrated tr
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Dual channel ±100 V, high voltage 3 A linear amplifier and 2 A pulser transmitter
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64-channel (±100 V / -200 to 0 V / 0 to 200 V), low harmonic distortion, highvoltage analog ind
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Quad ±90 V, ±2 A, 3/5 level, ESD-enhanced high-speed ultrasound pulser