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Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an HiP247 long leads package
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High voltage and high-speed half-bridge gate driver for GaN power switches
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Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an HU3PAK package
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High-performance MEMS nano pressure sensor: 260-1260 hPa absolute digital output barometer
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Galvanic isolated octal high-side power solid state relay for high inductive loads
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High-performance advanced line, Arm Cortex-M4 core with DSP and FPU, 2 Mbytes of Flash memory, 180 M