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Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 package
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N-Channel 600 V, 0.9 Ohm typ., 5 A MDmesh Power MOSFET in an IPAK package
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N-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in DPAK package
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N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a D2PAK package
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High-performance and DSP with DP-FPU, Arm Cortex-M7 + Cortex-M4 MCU with 2MBytes of Flash memory, 1M
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Trench gate field-stop 1200 V, 40 A low loss M series IGBT die in D7 packing
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N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package
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N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
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Automotive-grade ACEPACK SMIT half-bridge topology featuring 1200 V, 67 mOhm typ., 28 A SiC Power MO