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Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing
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N-channel 55 V, 12 mOhm, 60 A STripFET II Power MOSFET in a DPAK package
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N-channel 600 V, 0.48 Ohm typ., 13 A SuperMesh Power MOSFET in TO-220FP package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mOhm typ., 237 A in a STPAK package
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N-channel 650 V, 0.012 Ohm typ., 138 A MDmesh M5 Power MOSFET in a Max247 package
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 1 MByte Flash, 564 KBytes RAM, 550 MHz
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N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-220 package