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N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package
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Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
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Automotive-grade P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in a DPAK package
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N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package
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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode
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Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheelin
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N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in TO-220 package