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N-channel 200 V, 0.10 Ohm typ., 18 A StripFET Power MOSFET in DPAK package
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ACEPACK SMIT half-bridge topology 1200 V, 50 A, M series IGBT with diode
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1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D7 packing
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Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
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N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 long leads package
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N-channel 60 V, 6.8 mOhm typ., 40 A STripFET F7 Power MOSFET in a DPAK package
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N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a D2PAK package