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Automotive-grade ACEPACK SMIT half-bridge topology 650 V, 80 A HB series IGBT with diode
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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package