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    STDRIVEG600

    STDRIVEG600

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    Active

    STDRIVEG600TR

    High voltage half-bridge gate driver for GaN transistors

    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-16
    Description

    The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.The device is designed for driving high-speed GaN and Si FETs...
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    Key features
    Key features
    • dV/dt immunity ±200 V/ns
    • Driver current capability:
      • 1.3/2.4 A source/sink typ @ 25 °C, 6
        V
      • 5.5/6 A source/sink typ @ 25 °C, 15
        V
    • Separated turn on and turn off gate driver pins
    • 45 ns propagation delay with tight matching
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Interlocking function
    • UVLO on low-side and high-side sections
    • Dedicated pin for shut down functionality
    • Over temperature protection
    In stock
    Quantity $ per unit Savings
    1-9$2.310%
    10-80$1.5732%
    80 + Contact sales
    $2.31
    $2.31
    Parameters
    Operating RangeIndustrial
    Operating Temp Min Celsius-40.0
    Operating Temp Max Celsius150.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSO-16
    Description

    The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.The device is designed for driving high-speed GaN and Si FETs...
    Read More

    Key features
    Key features
    • dV/dt immunity ±200 V/ns
    • Driver current capability:
      • 1.3/2.4 A source/sink typ @ 25 °C, 6
        V
      • 5.5/6 A source/sink typ @ 25 °C, 15
        V
    • Separated turn on and turn off gate driver pins
    • 45 ns propagation delay with tight matching
    • 3.3 V, 5 V TTL/CMOS inputs with hysteresis
    • Interlocking function
    • UVLO on low-side and high-side sections
    • Dedicated pin for shut down functionality
    • Over temperature protection
    Associated products