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High voltage half-bridge gate driver for GaN transistors
Operating Range | Industrial |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 150.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | SO-16 |
The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.The device is designed for driving high-speed GaN and Si FETs...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $2.31 | 0% |
10-24 | $1.72 | 26% |
25-99 | $1.57 | 32% |
100-249 | $1.40 | 39% |
250-499 | $1.32 | 43% |
500 | $1.28 | 44% |
500 + |
Contact sales |
Operating Range | Industrial |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 150.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tape And Reel |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | SO-16 |
The STDRIVEG600 is a single chip half-bridge gate driver for Enhancement mode GaN FETs or N-channel power MOSFET.The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V.The device is designed for driving high-speed GaN and Si FETs...
Read More
|