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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 pa
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Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in an HU3PAK package
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HU3PAK package
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MEMS digital output motion sensor: ultra-low-power high-performance 3-axis "femto" accelerom
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
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Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an H2PAK-7 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mOhm typ., 237 A in a STPAK package
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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
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Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package