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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 long leads package
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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
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High-accuracy, high-resolution, low-power, 2-axis digital inclinometer with embedded machine learnin
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Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
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1 Mbit Serial I2C bus EEPROM with configurable device address and software write protection register
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MPU with Dual Arm Cortex-A35 @1.5GHz, Cortex-M33 @400MHz, 3xEthernet (2+1 switch), 3xFD-CAN, LVDS/DS