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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247 package
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1 Mbit Serial I2C bus EEPROM with configurable device address and software write protection register
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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
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Automotive chip for battery management applications with daisy chain up to 31 devices
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300 mA, 28 V low-dropout voltage regulator, with 5 µA quiescent current
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2 Mbit Serial I2C bus EEPROM with configurable device address and software write protection register
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1 Mbit Serial I2C bus EEPROM with configurable device address and software write protection register
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Mainstream Arm Cortex-M4 MCU 170 MHz with 128 Kbytes of Flash memory, Math Accelerator, HR Timer, Hi
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Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package