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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
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Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
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N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220 package
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N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package
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Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
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Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
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Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 package