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Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
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N-channel 100 V, 14.5 mOhm typ., 12 A, STripFET F7 DeepGATE Power MOSFET in a PowerFLAT 5x6 package
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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package
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Dynamic NFC/RFID tag IC with 4-Kbit EEPROM, and fast transfer mode capability
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Synchronous rectification with inhibit, 1.5 A, 1.5 MHz fixed or adjustable, step-down switching regu