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Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an HiP247 package
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High-performance foundation line, Arm Cortex-M4 core with DSP and FPU, 1 Mbyte of Flash memory, 168
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Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an H2PAK-2 package
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ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode an
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Digital temperature sensor and thermal watchdog, delta-sigma analog-to-digital (ADC) converter, I2C