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Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package
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600 V half-bridge enhancement mode GaN HEMT with high voltage driver
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N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)