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Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 package
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SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged IGBT
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Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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High-performance and DSP with DP-FPU, Arm Cortex-M7 MCU with 1MBytes of Flash memory, 1MB RAM, 480 M