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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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300 mA low quiescent current very low noise LDO (automotive for SOT23-5L package)
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±15kV ESD protection 3 to 5.5V low power, up to 250kbps, RS-232 drivers and receivers
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Dynamic NFC/RFID tag IC with 16-Kbit EEPROM, and fast transfer mode capability