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Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247 package
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N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
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Sub-GHz Wireless Microcontrollers. Arm Cortex-M4 @48 MHz with 256 Kbytes of Flash memory, 64 Kbytes
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Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs