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Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247 package
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Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
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Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an HiP247-4 package
Sub-GHz Wireless Microcontrollers. Dual-core Arm Cortex-M4/M0+ @48 MHz with 256 Kbytes of Flash memo
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package
Mainstream Arm Cortex-M4 MCU 170 MHz with 128 Kbytes of Flash memory, Math Accelerator, Medium Analo
Ultra-low-power dual core Arm Cortex-M4 MCU 64 MHz, Cortex-M0+ 32 MHz with 1 Mbyte of Flash memory,
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
TPM 2.0 devices with an SPI or I2C interface
