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Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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Wide-bandwidth (8 MHz) rail to rail input/output 5 V CMOS small offset, single operational amplifier